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International Rectifier IRF9328PBF

International Rectifier - IRF9328PBF - IRF9328PBF P-channel MOSFET Transistor, 12 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF9328PBF P-channel MOSFET Transistor, 12 A, 30 V, 8-Pin SOIC
Mfr. Part#:

Allied Stock#: 70019294

 RoHS Compliant Part



View IRF9328PBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 2299.
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Standard Pricing
$0.860 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1680 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -12 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 19.7
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 80 ns
Time, Turn-On Delay: 19 ns
Transconductance, Forward: 20 S
Typical Gate Charge @ Vgs: 18 nC @ -4.5 V, 35 nC @ -10 V
Voltage, Diode Forward: -1.2 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.