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International Rectifier IRF9310PBF

International Rectifier - IRF9310PBF - IRF9310PBF P-channel MOSFET Transistor, 20 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF9310PBF P-channel MOSFET Transistor, 20 A, 30 V, 8-Pin SOIC
Mfr. Part#:

Allied Stock#: 70019233

 RoHS Compliant Part



View IRF9310PBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 573.
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$1.58 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 5250 pF @ -15 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -20 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 58 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: P-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 6.8
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 50 °C/W
Time, Turn-Off Delay: 65 ns
Time, Turn-On Delay: 25 ns
Transconductance, Forward: 39 S
Typical Gate Charge @ Vgs: 110 nC @ -15 V, 58 nC @ -4.5 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Diode Forward: -1.2 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.