Location: 
All Products

International Rectifier IRF8113PBF

International Rectifier - IRF8113PBF - MOSFET,  Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2 View larger image View larger image
Image may be a representation.
See specs for product details.

International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
Mfr. Part#:
IRF8113PBF

Allied Stock#: 70017009

 RoHS Compliant Part

 

Resources

View IRF8113PBF Datasheet Datasheet

View More from International Rectifier >>
Pricing (USD) & Availability
Special Pricing
$0.400 (Each)
1$0.400(Save 67%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.21 (Each)
1$1.210
10$0.610
100$0.510
500$0.480
1000$0.450
2500$0.420
10000$0.400
Availability

1140 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2910 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 17.2 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 24 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 6.8
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 17 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 73 S
Typical Gate Charge @ Vgs: 24 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.