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International Rectifier IRF8010SPBF

International Rectifier - IRF8010SPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 12Milliohms; ID 80A; D2Pak; PD 260W; VGS +/-20 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 12Milliohms; ID 80A; D2Pak; PD 260W; VGS +/-20
Mfr. Part#:

Allied Stock#: 70017553

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 5.
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$3.21 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 3830 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 80 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 81 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 260 W
Resistance, Drain to Source On: 15
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 61 ns
Time, Turn-On Delay: 15 ns
Transconductance, Forward: 82 V
Typical Gate Charge @ Vgs: 81 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.