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International Rectifier IRF7842PBF

International Rectifier - IRF7842PBF - MOSFET,  Power; N-Ch; VDSS 40V; RDS(ON) 4 Milliohms; ID 18A; SO-8; PD 2.5W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 4 Milliohms; ID 18A; SO-8; PD 2.5W; VGS +/-20V
Mfr. Part#:
IRF7842PBF

Allied Stock#: 70017007

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.597 (Each)
1$0.597(Save 70%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.00 (Each)
1$2.000
10$1.010
100$0.850
500$0.800
1000$0.750
2500$0.690
10000$0.660
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 4500 pF @ 20V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 18 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 33 nC
Height: 0.059" (1.5mm)
Length: 0.196" (5mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 5.9
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 21 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 81 S
Typical Gate Charge @ Vgs: 33 nC @ 4.5V
Voltage, Breakdown, Drain to Source: 40 V
Voltage, Drain to Source: 40 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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