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International Rectifier IRF7807ZPBF

International Rectifier - IRF7807ZPBF - IRF7807ZPBF N-channel MOSFET Transistor,  11 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
Mfr. Part#:
IRF7807ZPBF

Allied Stock#: 70018275

 RoHS Compliant Part

 

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View IRF7807ZPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.04 (Each)
1$1.040
10$0.460
100$0.350
1000$0.330
2500$0.300
10000$0.290
25000$0.270
Availability

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Minimum Quantity: 3800 |  Multiples Of: 95

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 770 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 11 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 18.2
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 10 ns
Time, Turn-On Delay: 6.9 ns
Transconductance, Forward: 22 S
Typical Gate Charge @ Vgs: 7.2 nC @ 4.5 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.