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International Rectifier IRF7495PBF

International Rectifier - IRF7495PBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
Mfr. Part#:

Allied Stock#: 70017520

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 400.
Pricing (USD) & Availability
Standard Pricing
$1.83 (Each)

400 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1530 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 7.3 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 34 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 22
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 10 ns
Time, Turn-On Delay: 8.7 ns
Transconductance, Forward: 11 S
Typical Gate Charge @ Vgs: 34 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.