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International Rectifier IRF7478TRPBF

International Rectifier - IRF7478TRPBF - MOSFET,  Power; N-Ch; VDSS 60V; RDS(ON) 20 Milliohms; ID 7A; SO-8; PD 2.5W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 20 Milliohms; ID 7A; SO-8; PD 2.5W; VGS +/-20V
Mfr. Part#:
IRF7478TRPBF

Allied Stock#: 70017717

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.356 (Each)
1$0.356(Save 70%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.19 (Each)
1$1.190
10$0.600
100$0.510
500$0.480
1000$0.450
4000$0.410
8000$0.390
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1740 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 7 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 21 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 30
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 44 ns
Time, Turn-On Delay: 7.7 ns
Transconductance, Forward: 17 S
Typical Gate Charge @ Vgs: 21 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
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