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International Rectifier IRF7465PBF

International Rectifier - IRF7465PBF - IRF7465PBF N-channel MOSFET Transistor, 1.9 A,  150 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7465PBF N-channel MOSFET Transistor, 1.9 A, 150 V, 8-Pin SOIC
Mfr. Part#:
IRF7465PBF

Allied Stock#: 70018255

 RoHS Compliant Part

 

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View IRF7465PBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.04 (Each)
1$1.040
10$0.530
100$0.440
500$0.420
1000$0.390
2500$0.360
10000$0.340
Availability

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Minimum Quantity: 3800 |  Multiples Of: 95

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 330 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 1.9 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.28 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 10 ns
Time, Turn-On Delay: 7 ns
Transconductance, Forward: 0.75 S
Typical Gate Charge @ Vgs: 10 nC @ 10 V
Voltage, Drain to Source: 150 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±30 V
Width: 0.157" (4mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.