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International Rectifier IRF7455PBF

International Rectifier - IRF7455PBF - MOSFET,  Power; N-Ch; VDSS 30V; RDS(ON) 0.06Ohm; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.06Ohm; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
Mfr. Part#:

Allied Stock#: 70016995

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 117.
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$1.61 (Each)

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Brand/Series: HEXFET Series
Capacitance, Input: 3480 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 15 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 37 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.02 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 51 ns
Time, Turn-On Delay: 17 ns
Transconductance, Forward: 44 S
Typical Gate Charge @ Vgs: 37 nC @ 5 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Diode Forward: 1.2 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±12 V
Width: 0.157" (4mm)


N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.