Location: 
All Products

International Rectifier IRF7424PBF

International Rectifier - IRF7424PBF - MOSFET,  Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S View larger image View larger image
Image may be a representation.
See specs for product details.

International Rectifier MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S
Mfr. Part#:
IRF7424PBF

Allied Stock#: 70016994

 RoHS Compliant Part

 
View More from International Rectifier >>
  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 1404.
Pricing (USD) & Availability
Standard Pricing
$1.32 (Each)
1$1.320
10$0.670
100$0.560
500$0.530
1000$0.500
2500$0.460
10000$0.440
Availability

1404 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 4030 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -11 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 75 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: P-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 22
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 150 ns
Time, Turn-On Delay: 15 ns
Transconductance, Forward: 17 S
Typical Gate Charge @ Vgs: 75 nC @ -10 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.