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International Rectifier IRF7416PBF

International Rectifier - IRF7416PBF - MOSFET,  Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ohm; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55 View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ohm; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55
Mfr. Part#:
IRF7416PBF

Allied Stock#: 70017278

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 105.
Pricing (USD) & Availability
Standard Pricing
$1.19 (Each)
1$1.190
10$0.600
100$0.510
500$0.480
1000$0.450
2500$0.410
10000$0.390
Availability

105 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1700 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -10 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 61 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: P-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.035 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 59 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 5.6 S
Typical Gate Charge @ Vgs: 61 nC @ -10 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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