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International Rectifier IRF7413ZPBF

International Rectifier - IRF7413ZPBF - MOSFET,  Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V
Mfr. Part#:
IRF7413ZPBF

Allied Stock#: 70017511

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 551.
Pricing (USD) & Availability
Standard Pricing
$0.960 (Each)
1$0.960
10$0.490
100$0.410
500$0.390
1000$0.360
2500$0.330
10000$0.320
Availability

551 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1210 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 13 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 9.5 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 13
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 11 ns
Time, Turn-On Delay: 8.7 ns
Transconductance, Forward: 62 S
Typical Gate Charge @ Vgs: 9.5 nC @ 10 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.