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International Rectifier IRF7401PBF

International Rectifier - IRF7401PBF - IRF7401PBF N-channel MOSFET Transistor, 8.7 A,  20 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7401PBF N-channel MOSFET Transistor, 8.7 A, 20 V, 8-Pin SOIC
Mfr. Part#:
IRF7401PBF

Allied Stock#: 70018243

 RoHS Compliant Part

 

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View IRF7401PBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.15 (Each)
1$1.150
10$0.580
100$0.490
500$0.460
1000$0.440
2500$0.400
10000$0.380
Availability

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Minimum Quantity: 3800 |  Multiples Of: 95

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1600 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 8.7 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.03 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 65 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 11 S
Typical Gate Charge @ Vgs: Maximum of 48 nC @ 4.5 V
Voltage, Drain to Source: 20 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±12 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.