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International Rectifier IRF7389PBF

International Rectifier - IRF7389PBF - IRF7389PBF Dual N/P-channel MOSFET Transistor,  5.3 A,  7.3 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7389PBF Dual N/P-channel MOSFET Transistor, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC
Mfr. Part#:
IRF7389PBF

Allied Stock#: 70017548

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 718.
Pricing (USD) & Availability
Standard Pricing
$1.14 (Each)
1$1.140
10$0.580
100$0.490
500$0.460
1000$0.430
2500$0.400
10000$0.380
Availability

718 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 650 pF @ 25 V (N), 710 pF @ -25 V (P)
Channel Mode: Enhancement
Channel Type: N, P
Configuration: Dual Drain
Current, Drain: -5.3 (P), 7.3 (N) A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 22/23 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel and P-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.046 (N), 0.098 (P) Ω
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 50 °C/W
Time, Turn-Off Delay: 26 (N), 34 (P) ns
Time, Turn-On Delay: 13 (P), 8.1 (N) ns
Transconductance, Forward: 14 (N), 7.7 (P) S
Typical Gate Charge @ Vgs: 22 nC @ 10 V (N), 23 nC @ -10 V (P)
Voltage, Breakdown, Drain to Source: 30/-30 V
Voltage, Drain to Source: -30 (P), 30 (N) V
Voltage, Forward, Diode: 0.78/-0.78 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

  • Generation V Technology
  • Ultra Low On-Resistance
  • Complimentary Half Bridge
  • Surface Mount
  • Fully Avalanche rated
  • Lead-Free
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