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International Rectifier IRF7329PBF

International Rectifier - IRF7329PBF - MOSFET,  Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de View larger image View larger image
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International Rectifier MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
Mfr. Part#:
IRF7329PBF

Allied Stock#: 70017580

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.421 (Each)
1$0.421(Save 70%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.41 (Each)
1$1.410
10$0.710
100$0.600
500$0.570
1000$0.530
2500$0.490
10000$0.460
Availability

62 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 3450 pF @ -10 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Source, Quad Drain
Current, Drain: -9.2 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 38 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: Dual P-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 30
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 340 ns
Time, Turn-On Delay: 10 ns
Transconductance, Forward: 25 S
Typical Gate Charge @ Vgs: 38 nC @ -4.5 V
Voltage, Breakdown, Drain to Source: -12 V
Voltage, Drain to Source: -12 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±8 V
Width: 0.157" (4mm)

Overview

HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.