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International Rectifier IRF7316PBF

International Rectifier - IRF7316PBF - MOSFET,  Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ohm; ID -4.9A; SO-8; PD 2W; VGS +/-20
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International Rectifier MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ohm; ID -4.9A; SO-8; PD 2W; VGS +/-20
Mfr. Part#:
IRF7316PBF

Allied Stock#: 70017578

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.374 (Each)
1$0.374(Save 67%)
10000$0.370(Save 67%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.13 (Each)
1$1.130
10$0.570
100$0.480
500$0.450
1000$0.420
2500$0.390
10000$0.370
Availability

724 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 710 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -4.9 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 23 nC
Height: 0.059" (1.5mm)
Length: 0.196" (5mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: Dual P-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.098 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 34 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 7.7 S
Typical Gate Charge @ Vgs: 23 nC @ -10 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -0.78 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.