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International Rectifier IRF7307QPBF

International Rectifier - IRF7307QPBF - MOSFET,  Power; Dual N-Ch & P-Ch; VDSS 20 V (N-Ch),  -20 V (P-Ch); SO-8; PD 2W; -55degc
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International Rectifier MOSFET, Power; Dual N-Ch & P-Ch; VDSS 20 V (N-Ch), -20 V (P-Ch); SO-8; PD 2W; -55degc
Mfr. Part#:
IRF7307QPBF

Allied Stock#: 70017865

 RoHS Compliant Part

 

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Pricing (USD) & Availability
Standard Pricing
$0.510 (Each)
760$0.510
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Minimum Quantity: 760 |  Multiples Of: 95

Specifications

Category: Power MOSFET
Channel Mode: Enhancement
Channel Type: N, P
Configuration: Dual Drain
Dimensions: 5.00 x 4.00 x 1.50 mm
Forward Diode Voltage: -1 (P), 1 (N) V
Forward Transconductance: 4 (P), 8.3 (N) S
Height: 1.5 mm
Length: 5 mm
Maximum Continuous Drain Current: -4.3 (P), 5.2 (N) A
Maximum Drain Source Resistance: 0.070 (N), 0.140 (P) Ω
Maximum Drain Source Voltage: -20 (P), 20 (N) V
Maximum Gate Source Voltage: ±12 V
Maximum Operating Temperature: +150 °C
Maximum Power Dissipation: 2 W
Minimum Operating Temperature: -55 °C
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Operating Temperature Range: -55 to +150 °C
Package Type: SO-8
Pin Count: 8
Typical Gate Charge @ Vgs: Maximum of 20 nC @ 4.5 V (N), Maximum of 22 nC @ -4.5 V (P)
Typical Input Capacitance @ Vds: 610 pF @ -15 V (P), 660 pF @ 15 V (N)
Typical Turn On Delay Time: 8.4 (P), 9 (N) ns
Typical TurnOff Delay Time: 32 (N), 51 (P) ns
Width: 4 mm