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International Rectifier IRF7101PBF

International Rectifier - IRF7101PBF - IRF7101PBF Dual N-channel MOSFET Transistor,  3.5 A,  20 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7101PBF Dual N-channel MOSFET Transistor, 3.5 A, 20 V, 8-Pin SOIC
Mfr. Part#:
IRF7101PBF

Allied Stock#: 70016974

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.244 (Each)
1$0.244(Save 76%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.02 (Each)
1$1.020
10$0.450
100$0.350
1000$0.330
2500$0.290
10000$0.280
25000$0.270
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 320 pF @ 15V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Source, Quad Drain
Current, Drain: 3.5 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 15 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.15 Ω
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 62.5 °C/W
Time, Turn-Off Delay: 24 ns
Time, Turn-On Delay: 7 ns
Transconductance, Forward: 1.1 S
Typical Gate Charge @ Vgs: Maximum of 15 nC @ 10 V
Voltage, Breakdown, Drain to Source: 20 V
Voltage, Drain to Source: 20 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±12 V
Width: 0.157" (4mm)

Overview

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dual N-Channel MOSFET
  • Surface Mount
  • Available in Tape and reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free
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    *Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.