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International Rectifier IRF6218PBF

International Rectifier - IRF6218PBF - MOSFET,  Power; P-Ch; VDSS -150V; RDS(ON) 120 Milliohms; ID -27A; TO-220AB; PD 250W View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 120 Milliohms; ID -27A; TO-220AB; PD 250W
Mfr. Part#:
IRF6218PBF

Allied Stock#: 70017494

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 1246.
Pricing (USD) & Availability
Standard Pricing
$3.28 (Each)
1$3.280
10$1.740
100$1.540
500$1.440
1000$1.380
2500$1.330
5000$1.260
Availability

1246 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2210 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -27 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 71 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: P-Channel
Power Dissipation: 250 W
Resistance, Drain to Source On: 150
Resistance, Thermal, Junction to Case: 0.6 °C/W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 35 ns
Time, Turn-On Delay: 21 ns
Transconductance, Forward: 11 S
Typical Gate Charge @ Vgs: 71 nC @ -10 V
Voltage, Breakdown, Drain to Source: -150 V
Voltage, Drain to Source: -150 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ± 20 V
Width: 0.185" (4.69mm)
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