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International Rectifier IRF6216TRPBF

International Rectifier - IRF6216TRPBF - MOSFET,  Power; P-Ch; VDSS -150V; RDS(ON) 0.24Ohm; ID -2.2A; SO-8; PD 2.5W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.24Ohm; ID -2.2A; SO-8; PD 2.5W; VGS +/-20V
Mfr. Part#:
IRF6216TRPBF

Allied Stock#: 70017681

 RoHS Compliant Part

 

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View IRF6216TRPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.48 (Each)
1$1.480
10$0.750
100$0.630
500$0.590
1000$0.560
4000$0.510
8000$0.490
Availability

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Minimum Quantity: 4000 |  Multiples Of: 4000

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1280 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -2.2 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 33 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: P-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.24 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 33 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 2.7 S
Typical Gate Charge @ Vgs: 33 nC @ -10 V
Voltage, Breakdown, Drain to Source: -150 V
Voltage, Drain to Source: -150 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.