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International Rectifier IRF6215PBF

International Rectifier - IRF6215PBF - MOSFET,  Power; P-Ch; VDSS -150V; RDS(ON) 0.29Ohm; ID -13A; TO-220AB; PD 110W; VGS +/-20 View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.29Ohm; ID -13A; TO-220AB; PD 110W; VGS +/-20
Mfr. Part#:
IRF6215PBF

Allied Stock#: 70016969

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 956.
Pricing (USD) & Availability
Standard Pricing
$1.82 (Each)
1$1.818
10$0.967
100$0.852
500$0.794
1000$0.760
2500$0.737
5000$0.702
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 860 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -13 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 66 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: P-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.58 Ω
Resistance, Thermal, Junction to Case: 1.4 °C/W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 53 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 3.6 S
Typical Gate Charge @ Vgs: Maximum of 66 nC @ -10 V
Voltage, Breakdown, Drain to Source: -150 V
Voltage, Drain to Source: -150 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ± 20 V
Width: 0.185" (4.69mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.