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International Rectifier IRF5305STRLPBF

International Rectifier - IRF5305STRLPBF - MOSFET,  Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ohm; ID -31A; D2Pak; PD 110W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ohm; ID -31A; D2Pak; PD 110W; VGS +/-20V
Mfr. Part#:

Allied Stock#: 70017469

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 1515.
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$1.98 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1200 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -31 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 63 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: P-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.06 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 39 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 8 S
Typical Gate Charge @ Vgs: Maximum of 63 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Diode Forward: -1.3 V
Voltage, Drain to Source: -55 V
Voltage, Forward, Diode: -1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.