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International Rectifier IRF5210SPBF

International Rectifier - IRF5210SPBF - MOSFET,  Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc
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International Rectifier MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc
Mfr. Part#:
IRF5210SPBF

Allied Stock#: 70017467

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 968.
Pricing (USD) & Availability
Standard Pricing
$3.49 (Each)
1$3.491
10$1.855
100$1.636
500$1.539
1000$1.479
2500$1.418
5000$1.413
Availability

968 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2780 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -38 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 150 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: P-Channel
Power Dissipation: 170 W
Resistance, Drain to Source On: 60
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 72 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 9.5 S
Typical Gate Charge @ Vgs: 150 nC @ -10 V
Voltage, Breakdown, Drain to Source: -100 V
Voltage, Drain to Source: -100 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)