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International Rectifier IRF4905PBF

International Rectifier - IRF4905PBF - MOSFET,  Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ohm; ID -74A; TO-220AB; PD 200W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ohm; ID -74A; TO-220AB; PD 200W; VGS +/-20V
Mfr. Part#:

Allied Stock#: 70016959

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 297.
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$1.67 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Capacitance, Input: 3400 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -74 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 180 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: P-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 0.02 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 61 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 21 S
Typical Gate Charge @ Vgs: Maximum of 180 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Diode Forward: -1.6 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ± 20 V
Width: 4.69 mm


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.