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International Rectifier IRF3808SPBF

International Rectifier - IRF3808SPBF - MOSFET,  Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 106A; D2Pak; PD 200W; VGS +/-2 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 106A; D2Pak; PD 200W; VGS +/-2
Mfr. Part#:
IRF3808SPBF

Allied Stock#: 70017573

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$1.68 (Each)
1$1.682(Save 53%)
2500$1.610(Save 55%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$3.61 (Each)
1$3.612
10$2.082
100$1.956
250$1.841
500$1.760
1000$1.691
2500$1.610
Availability

70 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 5310 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 106 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 150 nC
Height: 0.19" (4.83mm)
Length: 0.42" (10.67mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 7
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 68 ns
Time, Turn-On Delay: 16 ns
Transconductance, Forward: 100 S
Typical Gate Charge @ Vgs: 150 nC @ 10 V
Voltage, Breakdown, Drain to Source: 75 V
Voltage, Drain to Source: 75 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.