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International Rectifier IRF3717PBF

International Rectifier - IRF3717PBF - IRF3717PBF N-channel MOSFET Transistor, 20 A,  20 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF3717PBF N-channel MOSFET Transistor, 20 A, 20 V, 8-Pin SOIC
Mfr. Part#:

Allied Stock#: 70018214

 RoHS Compliant Part



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Minimum Quantity: 3800 |  Multiples Of: 95


Brand/Series: HEXFET Series
Capacitance, Input: 2890 pF @ 10 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 20 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 5.7
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 15 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 57 S
Typical Gate Charge @ Vgs: 22 nC @ 4.5 V
Voltage, Diode Forward: 1 V
Voltage, Drain to Source: 20 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)


N-Channel Power MOSFET 20A to 29A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.