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International Rectifier IRF3710ZPBF

International Rectifier - IRF3710ZPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 14Milliohms; ID 59A; TO-220AB; PD 160W; -55deg View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 14Milliohms; ID 59A; TO-220AB; PD 160W; -55deg
Mfr. Part#:
IRF3710ZPBF

Allied Stock#: 70016957

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.911 (Each)
1$0.911(Save 59%)
2500$0.909(Save 59%)
5000$0.867(Save 61%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.22 (Each)
1$2.225
10$1.180
100$1.045
500$0.971
1000$0.940
2500$0.909
5000$0.867
Availability

438 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2900 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 59 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Gate Charge, Total: 82 nC
Height: 9.02 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 160 W
Resistance, Drain to Source On: 18
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 41 ns
Time, Turn-On Delay: 17 ns
Transconductance, Forward: 35 S
Typical Gate Charge @ Vgs: 82 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.