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International Rectifier IRF3709ZSPBF

International Rectifier - IRF3709ZSPBF - MOSFET,  N Ch.,  30V,  87A,  6.3 MOHM,  17 NC QG,  D2-PAK,  Pb-Free View larger image View larger image
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International Rectifier MOSFET, N Ch., 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK, Pb-Free
Mfr. Part#:
IRF3709ZSPBF

Allied Stock#: 70017981

 RoHS Compliant Part

 

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View IRF3709ZSPBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 13.
Pricing (USD) & Availability
Standard Pricing
$2.07 (Each)
1$2.070
10$1.100
100$0.970
500$0.910
1000$0.880
2500$0.840
5000$0.800
Availability

13 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

limited product availability

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2130 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 87 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Power Dissipation: 79 W
Resistance, Drain to Source On: 6.3
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 16 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 88 S
Typical Gate Charge @ Vgs: 17 nC @ 4.5 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

Overview

N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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