Location: 
All Products

International Rectifier IRF3707ZSPBF

International Rectifier - IRF3707ZSPBF - MOSFET,  N Ch.,  30V,  59A,  9.5 MOHM,  9.7 NC QG,  D2-PAK,  Pb-Free View larger image View larger image
Image may be a representation.
See specs for product details.

International Rectifier MOSFET, N Ch., 30V, 59A, 9.5 MOHM, 9.7 NC QG, D2-PAK, Pb-Free
Mfr. Part#:
IRF3707ZSPBF

Allied Stock#: 70017992

 RoHS Compliant Part

 

Resources

View IRF3707ZSPBF Datasheet Datasheet

View More from International Rectifier >>
Pricing (USD) & Availability
Standard Pricing
$2.07 (Each)
1$2.070
10$1.100
100$0.980
500$0.920
1000$0.880
2500$0.840
5000$0.800
Availability

0 can ship immediately.

Request Lead Time

Minimum Quantity: 550 |  Multiples Of: 50

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1210 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 59 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Power Dissipation: 57 W
Resistance, Drain to Source On: 12.5
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 12 ns
Time, Turn-On Delay: 9.8 ns
Transconductance, Forward: 81 S
Typical Gate Charge @ Vgs: 9.7 nC @ 4.5 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

Overview

N-Channel Power MOSFET 50A to 59A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.