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International Rectifier IRF3315STRLPBF

International Rectifier - IRF3315STRLPBF - IRF3315STRLPBF N-channel MOSFET Transistor,  21 A,  150 V,  3-Pin D2PAK View larger image View larger image
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International Rectifier IRF3315STRLPBF N-channel MOSFET Transistor, 21 A, 150 V, 3-Pin D2PAK
Mfr. Part#:
IRF3315STRLPBF

Allied Stock#: 70018806

 RoHS Compliant Part

 

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Pricing (USD) & Availability
Standard Pricing
$2.77 (Each)
1$2.770
10$1.470
100$1.300
500$1.220
800$1.170
2400$1.120
4800$1.070
Availability

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Minimum Quantity: 3200 |  Multiples Of: 800

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1300 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 21 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Power Dissipation: 94 W
Resistance, Drain to Source On: 0.082 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 49 ns
Time, Turn-On Delay: 9.6 ns
Transconductance, Forward: 17 S
Typical Gate Charge @ Vgs: Maximum of 95 nC @ 10 V
Voltage, Drain to Source: 150 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.