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International Rectifier IRF2807ZPBF

International Rectifier - IRF2807ZPBF - MOSFET,  Power; N-Ch; VDSS 75V; RDS(ON) 7.5Milliohms; ID 89A; TO-220AB; PD 170W; -55deg View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7.5Milliohms; ID 89A; TO-220AB; PD 170W; -55deg
Mfr. Part#:
IRF2807ZPBF

Allied Stock#: 70017247

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.971 (Each)
1$0.971(Save 65%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.76 (Each)
1$2.760
10$1.460
100$1.299
500$1.213
1000$1.170
2500$1.117
5000$1.063
Availability

480 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 3270 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 89 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Gate Charge, Total: 71 nC
Height: 9.02 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 170 W
Resistance, Drain to Source On: 9.4
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 40 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 67 sec
Typical Gate Charge @ Vgs: 71 nC @ 10 V
Voltage, Breakdown, Drain to Source: 75 V
Voltage, Drain to Source: 75 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.