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International Rectifier IRF2807SPBF

International Rectifier - IRF2807SPBF - MOSFET,  Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; D2Pak; PD 230W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; D2Pak; PD 230W; VGS +/-20V
Mfr. Part#:

Allied Stock#: 70016949

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 31.
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$3.04 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 3820 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 82 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 160 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 230 W
Resistance, Drain to Source On: 13
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 49 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 38 S
Typical Gate Charge @ Vgs: Maximum of 160 nC @ 10 V
Voltage, Breakdown, Drain to Source: 75 V
Voltage, Diode Forward: 1.2 V
Voltage, Drain to Source: 75 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.