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International Rectifier IRF2805PBF

International Rectifier - IRF2805PBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 3.9Milliohms; ID 175A; TO-220AB; PD 330W; -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 3.9Milliohms; ID 175A; TO-220AB; PD 330W; -55de
Mfr. Part#:
IRF2805PBF

Allied Stock#: 70016947

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 246.
Pricing (USD) & Availability
Standard Pricing
$3.49 (Each)
1$3.486
10$2.013
100$1.898
250$1.783
500$1.703
1000$1.634
2500$1.553
Availability

246 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 5110 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 175 A
Dimensions: 10.67 x 4.83 x 16.51 mm
Gate Charge, Total: 150 nC
Height: 16.51 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 330 W
Resistance, Drain to Source On: 4.7
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 68 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 91 S
Typical Gate Charge @ Vgs: 150 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 20 V
Width: 0.19" (4.83mm)

Overview

N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.