Infineon IRF1503SPBF
MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 75A,D2Pak,PD 200W,VGS+/-20V
Mfr. Part #: IRF1503SPBF / RS Stock #: 70016945
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Price
Qty.
Standard Price
3200
$3.65
6400
$3.577
16000
$3.468
32000
$3.322
80000
$3.103
160000
$2.847
320000
$2.555
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Dual Drain
Drain Current
190 A
Drain to Source On Resistance
3.3 mΩ
Drain to Source Voltage
30 V
Forward Transconductance
75 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±20 V
Input Capacitance
5730 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
D2PAK
Polarization
N-Channel
Power Dissipation
200 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
130 nC
Turn Off Delay Time
59 ns
Turn On Delay Time
17 ns
Typical Gate Charge @ Vgs
130 nC @ 10 V
Voltage, Breakdown, Drain to Source
30 V
Overview
Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tj Max. Lead-Free