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International Rectifier IRF1404ZPBF

International Rectifier - IRF1404ZPBF - MOSFET,  Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de
Mfr. Part#:

Allied Stock#: 70016941

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Minimum Quantity: 550 |  Multiples Of: 50


Brand/Series: HEXFET Series
Capacitance, Input: 4340 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 180 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Gate Charge, Total: 100 nC
Height: 9.02 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 3.7
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 36 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 170 V
Typical Gate Charge @ Vgs: 100 nC @ 10 V
Voltage, Breakdown, Drain to Source: 40 V
Voltage, Drain to Source: 40 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)


Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tj Max.
  • Lead-Free