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International Rectifier IRF1310NPBF

International Rectifier - IRF1310NPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ohm; ID 42A; TO-220AB; PD 160W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ohm; ID 42A; TO-220AB; PD 160W; VGS +/-20V
Mfr. Part#:
IRF1310NPBF

Allied Stock#: 70016939

 RoHS Compliant Part

 

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View IRF1310NPBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 13.
Pricing (USD) & Availability
Standard Pricing
$2.51 (Each)
1$2.509
10$1.336
100$1.186
500$1.111
1000$1.061
2500$1.024
5000$0.974
Availability

13 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1900 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 42 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 110 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 160 W
Resistance, Drain to Source On: 0.036 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 45 ns
Time, Turn-On Delay: 45 ns
Transconductance, Forward: 14 S
Typical Gate Charge @ Vgs: Maximum of 110 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.