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International Rectifier IRF1010NPBF

International Rectifier - IRF1010NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; TO-220AB; PD 180W; gFS 32S View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; TO-220AB; PD 180W; gFS 32S
Mfr. Part#:

Allied Stock#: 70016936

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 1625.
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$2.33 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 3210 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 85 A
Dimensions: 10.66 x 4.82 x 16.51 mm
Gate Charge, Total: 120 nC
Height: 16.51 mm
Length: 10.66 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 180 W
Resistance, Drain to Source On: 11
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 39 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 32 S
Typical Gate Charge @ Vgs: Maximum of 120 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.82mm)


N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.