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International Rectifier IRF1010EZPBF

International Rectifier - IRF1010EZPBF - MOSFET,  Power; N-Ch; VDSS 60V; RDS(ON) 6.8Milliohms; ID 84A; TO-220AB; PD 140W; -55deg View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 6.8Milliohms; ID 84A; TO-220AB; PD 140W; -55deg
Mfr. Part#:
IRF1010EZPBF

Allied Stock#: 70016935

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 2233.
Pricing (USD) & Availability
Standard Pricing
$2.42 (Each)
1$2.423
10$1.290
100$1.134
500$1.071
1000$1.019
2500$0.988
5000$0.983
Availability

2233 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2810 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 84 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Gate Charge, Total: 58 nC
Height: 9.02 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 140 W
Resistance, Drain to Source On: 8.5
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 38 ns
Time, Turn-On Delay: 19 ns
Transconductance, Forward: 200 S
Typical Gate Charge @ Vgs: 58 nC @ 10 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)