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International Rectifier IR2153PBF

International Rectifier - IR2153PBF - HALF BRIDGE DRIVER,  LO IN PHASE WITH RT,  PROGRAMMABLE OSCILLATING FREQUENCY,  1.2 View larger image View larger image
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International Rectifier HALF BRIDGE DRIVER, LO IN PHASE WITH RT, PROGRAMMABLE OSCILLATING FREQUENCY, 1.2
Mfr. Part#:
IR2153PBF

Allied Stock#: 70017300

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 359.
Pricing (USD) & Availability
Standard Pricing
$2.54 (Each)
1$2.544
10$1.287
100$1.090
500$1.030
1000$0.954
2500$0.878
10000$0.848
Availability

359 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Bridge Type: Half Bridge
Configuration: Self Oscillating
Current, Leakage, Offset: 50 UA
Current, Peak: 200 mA
Current, Supply: 25 mA
Dimensions: 10.92 x 7.11 x 4.94 mm
Driver Type: High & Low Side
Fall Time: Maximum of 100 ns
Height: 4.94 mm
Input Logic Compatibility: CMOS
Length: 10.92 mm
Mounting Type: Through Hole
Number of Drivers: 2
Number of Outputs: 2
Number of Pins: 8
Operating Voltage Range: 10 to 16.8 V
Package Type: PDIP
Power Dissipation: 1 W
Temperature, Operating, Maximum: +125 °C
Temperature, Operating, Minimum: -40 °C
Temperature, Operating, Range: -40 to +125 °C
Thermal Resistance, Junction to Ambient: 125 degC/W
Time Delay: 660 (Shutdown)
Time, Fall, Turn-Off: 100 ns
Time, Rise: Maximum of 150 ns
Time, Rise, Turn-On: 150 ns
Voltage, Input Offset: 600 V
Width: 0.28" (7.11mm)

Overview

The IR2153D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1 V. Finally, special attention has been paid to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Features:
  • Floating Channel Designed for Bootstrap Operation
  • Fully Operational to +600 V
  • Cross-Conduction Prevention Logic

  • High Side Output in Phase with HIN Input