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International Rectifier IR2114SSPBF

International Rectifier - IR2114SSPBF - 600V HALF BRIDGE GATE DRIVER IC WITH ADVANCED PROTECTION FUNCTIONS
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International Rectifier 600V HALF BRIDGE GATE DRIVER IC WITH ADVANCED PROTECTION FUNCTIONS
Mfr. Part#:
IR2114SSPBF

Allied Stock#: 70017385

 RoHS Compliant Part

 

Resources

View IR2114SSPBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 90.
Pricing (USD) & Availability
Standard Pricing
$8.58 (Each)
1$8.580
10$6.280
25$5.550
100$5.200
250$4.970
500$4.780
1000$4.550
Availability

90 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Bridge Type: Half Bridge
Configuration: Non-Inverting
Current, Input Bias: 0 (Low), 330 (High) μA
Current, Peak: 2 (High), 3 (Low) A
Dimensions: 8.50 x 5.60 x 1.85 mm
Driver Type: High & Low Side
Fall Time: 7 ns
Height: 1.85 mm
High and Low Sides Dependency: Synchronous
Input Logic Compatibility: CMOS
Length: 8.5 mm
Mounting Type: Surface Mount
Number of Drivers: 2
Number of Outputs: 2
Number of Pins: 24
Operating Voltage Range: 11.5 to 20 V
Package Type: SSOP
Resistance, On-State: 60 Ω
Temperature, Operating, Maximum: +125 °C
Temperature, Operating, Minimum: -40 °C
Temperature, Operating, Range: -40 to +125 °C
Time Delay: 660 (Turn-Off), 660 (Turn-On)
Time, Rise: 24 ns
Width: 0.22" (5.6mm)

Overview

The IR2114 gate driver family is suited to drive a single half bridge in power switching applications. These drivers provide high gate driving capability (2 A source, 3 A sink) and require low quiescent current, which allows the use of bootstrap power supply techniques in medium power systems. These drivers feature full short circuit protection by means of power transistor desaturation detection and manage all half-bridge faults by smoothly turning off the desaturated transistor through the dedicated soft shutdown pin, therefore preventing over-voltages and reducing EM emissions. In multi-phase systems, the IR211(4,41)/ IR221(4,41) drivers communicate using a dedicated local network (SY_FLT and FAULT/SD signals) to properly manage phase-to-phase short circuits. The system controller may force shutdown or read device fault state through the 3.3 V compatible CMOS I/O pin (FAULT/SD). To improve the signal immunity from DC-bus noise, the control and power ground use dedicated pins enabling low-side emitter current sensing as well. Undervoltage conditions in floating and low voltage circuits are managed independently.




Features:





  • Floating channel up to +600 V or +1200 V
  • Soft over-current shutdown
  • Synchronization signal to synchronize shutdown with the other phases
  • Integrated desaturation detection circuit
  • Two stage turn on output for di/dt control
  • Separate pull-up/pull-down output drive pins
  • Matched delay outputs
  • Undervoltage lockout with hysteresis band